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Reaction Of Amorphous And Crystalline Alloys With Silicon

Published online by Cambridge University Press:  26 February 2011

L. S. Hung
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
S. Q. Wang
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
F. W. Saris
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The, Netherlands
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Abstract

The reaction of Ni- refractory metal alloys with silicon has been studied by backscattering spectrometry and transmission electron microscopy. The analysis of the as-deposited sample revealed solid solutions for Ni-Cr and amorphous phases for Ni-Ta and Ni-Ti. In situ annealing resulted in crystallization of Ni43 Ta57 at 750 °C, a value above the reaction temperature of the alloy with silicon. The amorphous alloy of Ni48Ti52 was transformed into the equilibrium compound of NiTi at 450 °C, much below the reaction temperature. Phase separation has been observed in the Ni-Cr and Ni-Ta systems with a Ni- silicide layer next to the Si substrate and a refractory disilicide layer on the other side. In contrast, Si reacts with the NiTi compound to form a uniform mixed layer with a composition of NiTiSi2. The different behavior is explained based on considerations of both thermodynamic and kinetic terms.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Mayer, J. W., Lau, S. S., and Tu, K. N., J. Appl. Phys. 50, 5585 (1979).Google Scholar
2. Tu, K. N., Hammer, W. N., and Olowolafe, J. O., J. Appl. Phys. 51, 1663 (1980).Google Scholar
3. Eizenberg, M. and Tu, K. N., J. Appl. Phys. 53, 1577 (1982).Google Scholar
4. Ottaviani, G., Tu, K. N., Mayer, J. W., and Tsour, B. Y., Appl. Phys. Lett. 36, 331 (1980).Google Scholar
5. Thompson, R. D., Tu, K. N., and Ottaviani, G., J. Appl. Phys. 58, 705 (1985).Google Scholar
6. Zhu, M. F., Suni, I., Nicolet, M.-A., and Sands, T., J. Appl. Phys. 56, 2740 (1984).Google Scholar
7. See for example, Ottaviani, G. and Mayer, J. W., in Relibility and Degradation, edited by Howes, M. J. and Morgan, D. V. (Wiley, New York, 1981), chapt. 2.Google Scholar
8. X-ray Power Data File, JCPDS (1984).Google Scholar
9. Hung, L. S. and Mayer, J. W., submitted to J. Appl. Phys.Google Scholar
10. Miedema, A. R., de Chatel, P. F., and de Boer, F. R., Physia, 100B, 1 (1980).Google Scholar
11. Lien, C. D., Nicolet, M.-A., and Lau, S. S., Phys. Stat. Sol.(a) 81, 123 (1984).Google Scholar
12. Zheng, L. R., Hung, L. S., and Mayer, J. W., submitted to MRS 1985 (Abstract EP1.22).Google Scholar