Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-19T07:15:06.608Z Has data issue: false hasContentIssue false
  • English
  • Français

Reaction between Low Dielectric Constant Fluorinated Polyimide and Aluminum

Published online by Cambridge University Press:  15 February 2011

H. Y. Tong ,
F. J. Szalkowski ,
F. G. Shi ,
B. Zhao ,
M. Brongo ,
S.-Q. Wang  and
P. K. Vasudev
H. Y. Tong
Affiliation:
School of Engineering, University of California, Irvine, CA 92697
F. J. Szalkowski
Affiliation:
School of Engineering, University of California, Irvine, CA 92697
F. G. Shi
Affiliation:
School of Engineering, University of California, Irvine, CA 92697
B. Zhao
Affiliation:
Rockwell Semiconductor Systems, Newport Beach, CA 92660
M. Brongo
Affiliation:
Rockwell Semiconductor Systems, Newport Beach, CA 92660
S.-Q. Wang
Affiliation:
Allied Signal Inc., Advanced Microelectronic Materials, Santa Clara, CA 95054
P. K. Vasudev
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
Get access

Abstract

Interactions between fluorinated polyimide and aluminum under different thermal treatment conditions have been investigated using transmission electron microscopy (TEM) and x-ray diffractometry (XRD) techniques over a wide temperature range. Our results suggest that the oxygen from the dielectric materials may result in the oxidation of the underlying aluminum either on the surface or along the grain boundary. This work implies that processing conditions, such as curing temperature and time, may play critical roles in affecting the performance of polymeric dielectric materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 75
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]. Homma, Y., Kusukawa, K., Furusawa, T., Miyazaki, H. and Kobayashi, N., Electronics, and Communications in Japan, Part 2, 78, 52 (1995).Google Scholar
[2]. Zhao, B., Wang, S. -Q., Anderson, S., Lam, R., Fiebig, M., Vasudev, P. K. and Seidel, T. E., Mat. Res. Soc. Symp. Proc. 427, 415 (1996).Google Scholar
[3]. Papers in Low-Dielectric Constant Materials-Synthesis and Application in Microelectronics, edited by Lu, T. -M., Murarka, S. P., Kuan, T. -S. and Ting, C. H., Mat. Res. Soc. Symp. Proc. 381, (1995).Google Scholar
[4]. Singer, P., Semiconductor Int., 19, 88 (1996).Google Scholar
[5]. Homma, T., J. Non-Cryst. Solids, 187, 49 (1995).Google Scholar
[6]. Zhao, B., Wang, S. Q., Fiebig, M., Anderson, S., Vasudev, P. K. and Seidel, T. E., IEEE Inter. Reli. Phys. Proc., 156 (1996).Google Scholar
[7]. Hrubesh, L. W., Keene, L. E. and Latorre, V. R., J. Mater. Res., 8, 1736 (1993).Google Scholar
[8]. Wary, J., Olson, R. and Beach, W., Semiconductor. Int., 19, 211 (1996).Google Scholar
[9]. Auman, B. C., Proc. Dielc, for VLSI/ULSI Multi. Inter. Conf., 297 (1995).Google Scholar
[10]. Lau, K. S. Y., Hendricks, N. H., Smith, A. R. and Wan, W. B., Proc. Dielc, for VLSI/ULSI Multi. Inter. Conf, 126 (1995).Google Scholar
[11]. Babb, D. A., Ezzel, B. R., Clement, K. S., Richey, W. F. and Kennedy, A. P., J. Polymer Sci., Part A, 30, 3465 (1993).Google Scholar
[12]. Murarka, S. P., Solid State Tech., March, 83 (1996).Google Scholar
[13]. Leu, J., Lee, J. K., Kasthurirangan, J., Liao, C. N., Ho, P. S. and Ting, C. H., SRC Topical Research Conference On Low Dielectric Constant Interlayer Dielectrics for High Performance Circuits, RPI, Troy, New York, August 9–10, 1994.Google Scholar
[14]. Bohr, M. T., Technical Digest of International Electron Devices Meeting, 241 (1995).Google Scholar
[15]. Auman, B. C., Proc. Dielc, for VLSI/ULSI Multi. Inter. Conf., 297 (1995).Google Scholar
[16]. JCPDS-International Center for Diffraction Data, 1995.Google Scholar
[17]. Mckerrow, A. J., Leu, J., Ho, H. -M., Auman, B. C. and Ho, P., Conference Proceedings ULSI XI Mat. Res. Soc., 37 (1996).Google Scholar