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Rapid Thermal Processing and Crystallization Kinetics in Lead Zirconate Titanate (PZT) Thin Films

Published online by Cambridge University Press:  15 February 2011

E.M. Griswold
Affiliation:
Department of Materials and Metallurgical Engineering, Queen's University, Kingston, Canada, K7L 3N6
L. Weaver
Affiliation:
Department of Materials and Metallurgical Engineering, Queen's University, Kingston, Canada, K7L 3N6
I.D. Calder
Affiliation:
Telecom Microelectronics Centre, Northern Telecom Ltd., P.O. Box 3511, Station C, Ottawa, Ontario, Canada K1Y 4H7
M. Sayer
Affiliation:
Department of Materials and Metallurgical Engineering, Queen's University, Kingston, Canada, K7L 3N6
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Abstract

Rapid thermal processing (RTP) has been used to examine the crystallization kinetics of lead zirconate titanate (PZT) fabricated using a sol gel process. Depth profiling of PZT films was performed with glancing angle x-ray diffraction and transmission electron microscopy. The films were annealed using RTP ramp rates from 10°C/s to 200°C/s and hold temperatures from 525°C to 650°C. The effect of ramp rate on the phase transformation is presented, and the growth of oriented columnar structures is demonstrated. Films subjected to RTP at 650°C for 1s using a ramp of 10°C/s began to transform to perovskite and were ferroelectric while a ramp of 100°C/s (same hold) produced a linear material which was pyrochlore. Longer hold conditions such as 650°C for 30s produced ferroelectric films with Pr in excess of 20μC/cm2 and relative permittivities ε > 600.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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