Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T01:56:47.578Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Crystallization Of LPCVD Amorphous Silicon Films

Published online by Cambridge University Press:  15 February 2011

A. T. Voutsas ,
M. K. Hatalis ,
K. R. Olasupo ,
A. K. Nanda  and
D. Alugbin
A. T. Voutsas
Affiliation:
Lehigh University, Display Research Laboratory, Bethlehem, PA. 18015
M. K. Hatalis
Affiliation:
Lehigh University, Display Research Laboratory, Bethlehem, PA. 18015
K. R. Olasupo
Affiliation:
AT&T Bell Laboratories, Allentown, PA. 18103
A. K. Nanda
Affiliation:
AT&T Bell Laboratories, Allentown, PA. 18103
D. Alugbin
Affiliation:
AT&T Bell Laboratories, Allentown, PA. 18103
Get access

Abstract

The crystallization of LPCVD a-Si by Rapid Thermal Anneal was investigated. RTA polysilicon films can find application in the fabrication of TFTs for AMLCDs, due to the lower thermal budget associated with fast crystallization at high temperatures. It was found that the grain size of the crystallized films decreases with the temperature, in the range of 700°C to 1100°C, while for higher temperatures the opposite trend is observed. The latter observation was attributed to the high thermal vibration of subcritical clusters, that was assumed responsible for the decline in the nuclei population at high annealing temperatures, combined with the faster crystalline growth rate at high temperatures. RTA silicon films were found to have lower intra-grain defect density, that may result in the improvement of the electrical characteristics of the polysilicon films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 93
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lewis, A. G., Lee, D. D. and Bruce, R. H., IEEE J. Solid-State Circuits, 27, 1833 (1992).Google Scholar
2. Hatalis, M. K. and Greve, D. W., J. Appl. Phys., 63, 2260 (1988).Google Scholar
3. Korin, E., Reif, R. and Mikic, B., Thin Solid Films, 167, 101 (1988).Google Scholar
4. Chen, S., Boyce, J. B., Wu, I.-W., Chiang, A., Johnson, R. I., Anderson, G. B. and Ready, S. E., SID Eurodisplay'93 Proc., 195 (1993).Google Scholar
5. Bonnel, M., Duhamel, N., Guendouz, M., Haji, L., Loisel, B. and Ruault, P., Jap. J. Appl. Phys., 30, L1924 (1991).Google Scholar
6. Mehlhaff, J. and Fair, J., AMLCDs'93 Symp. Proc., Lehigh University, Oct. 21–22, 158 (1993).Google Scholar
7. Voutsas, A. T. and Hatalis, M. K., J. Electrochem. Soc., 139, 2659 (1992).Google Scholar
8. Johnson, W. A. and Mehl, R. F., Trans. AIME, 135, 416 (1939).Google Scholar
9. Koster, U., Phys. Stat. Sol. A, 48, 313 (1978).Google Scholar
10. Thompson, C. V., J. Appl. Phys., 58, 763 (1985).Google Scholar
11. Thompson, C. V., Annu. Rev. Mater. Sci., 20, 245 (1990).Google Scholar