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Rapid Thermal Annealing of Ion-Implanted Silicon and Gallium Arsenide

Published online by Cambridge University Press:  22 February 2011

J. Narayan
J. Narayan*
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

We have investigated the annealing of ion implantation damage (in the form of amorphous layers and/or the layers containing only dislocation loops) in silicon and gallium arsenide. The annealing of amorphous layers occurs by solid-phase-epitaxial growth and that of dislocation loops involves primarily loop-coalescence as a result of conservative climb and glide processes. The annealing of disolated loops occurs primarily by a bulk diffusion process. Almost a “complete” annealing of displacement damage is possible for shallow implants provided loop–coalescence does not lead to the formation of cross–grid of dislocations. For deep implants, the free surface cannot provide an effective sink for defects as in the case of shallow implants. Dopant profiles can be controlled to less than 1000 Å in layers having good electrical properties. The enhanced diffusion of dopants is observed probably due to entrapment of point defects in the annealed regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 335
Copyright
Copyright © Materials Research Society 1984

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

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