Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:51:10.579Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Annealing of Al and P Implanted Single Crystal Beta Silicon Carbide Thin Films

Published online by Cambridge University Press:  26 February 2011

J. A. Edmond ,
H. J. Kim  and
R. F. Davis
J. A. Edmond
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
H. J. Kim
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
Get access

Abstract

Ion implantation of 27Al+ and 31p+ ions into monocrystalline s-SiC films was conducted in order to acquire p-type and n-type conducting layers, respectively. Implant energies ranging from 110 to 190 keV and fluences from 7 × 1013 to 9 × 1014 cm-2 were used. In order to activate each dopant specie, rapid thermal annealing (RTA) was employed. A decrease in sheet resistance with increasing annealing temperature for both type layers was observed up to 1800°C. After annealing at this highest temperature for 300 s in 1 atm. Ar, the percent of activated and ionized n-type and p-type dopant was ≅20% and ≅0.5%, respectively, as determined by room temperature capacitance-voltage measurements. Recrystallization of both heavily damaged and amorphized layers occurred as a result of the use of the aforementioned annealing process. Unlike SPE regrowth in other compound semiconductors, no microtwins were present in the regrown bulk as observed by XTEM. SIMS analyses also showed that there was essentially no redistribution of P and moderate redistribution of Al from the corresponding as-implanted profiles after annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 157
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Vodakov, Y.A. and Mokhov, E.N., in Silicon Carbide 1973, edited by Marshall, R.C., Faust, J.W. Jr. and Ryan, C.E. (University of South Carolina Press, Columbia, SC, 1973), pp. 508–519.Google Scholar
2. Marsh, O.J. and Dunlap, H.L., Rad. Effects 6, 301 (1970).Google Scholar
3. Kalmina, E.V., Suvorov, A.V., and Kholuyanov, G.F., Soy. Phys. Semicond. 14, 652 (1980).Google Scholar
4. Addamiano, A., Anders-n, C.W., Comas, J., Hughes, H.L., and Lucke, W., J. Electrochem. Soc. 119, 1355 (1972).Google Scholar
5. Liaw, H.P. and Davis, R.F., J. Electrochem. Soc. 132, 642 (1985).Google Scholar
6. Carter, C.H. Jr., Edmond, J.A., Palmour, J.W., Ryu, J., Kim, H.J., and Davis, R.F., to be published in MRS Symposia Proceedings on Microscopic Identification of Electronic Defects in Semiconductors, San Francisco, CA 1985.Google Scholar