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Rapid Thermal Annealing in III-V Compounds

Published online by Cambridge University Press:  25 February 2011

D. Eirug Davies
D. Eirug Davies*
Affiliation:
Solid State Sciences Division, Rome Air Development Center, Hanscom Air Force Base, Massachusetts 01731
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Abstract

Progress in applying rapid thermal annealing for activating implants is surveyed. Advantages to be gained through curtailing substrate semiinsulating loss, enhancing heavy n-type activation, and in reducing the diffusive redistribution of p-type implants are discussed in detail. Consideration is given to encapsulation requirements and the role of stoichiometry in activation. While the emphasis is on GaAs, work on InP and InGaAs has also been included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 261
Copyright
Copyright © Materials Research Society 1985

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