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Rapid Thermal Annealing Effects in InxGal−xAs/GaAs Strained-Layer Superlattices

Published online by Cambridge University Press:  25 February 2011

J.A. Olsen ,
E.L. Hu ,
D.R. Myers ,
J.F. Klem  and
Andrew Skumanich
J.A. Olsen
Affiliation:
Univ. of Calif., Dept. of Eng. Materials, Santa Barbara, CA 93106.
E.L. Hu
Affiliation:
Univ. of Calif., Dept. of Eng. Materials, Santa Barbara, CA 93106.
D.R. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
J.F. Klem
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Andrew Skumanich
Affiliation:
IBM Almaden Research Center, San Jose, CA 95120
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Abstract

The effect of repetitive rapid thermal annealing (RTA) at 800°C was investigated in the strained-layer superlattices (SLS's) In.2Ga.8As/GaAs (80Å/80Å) and In.3Ga.7As/GaAs (80Å/80Å) using photoluminescence (PL) and the highly sensitive absorption technique photothermal deflection spectroscopy (PDS) [1]. The samples were repetitively annealed at 800 °C for 15 seconds intervals up to a total time of 45 seconds. Between each anneal, PL spectra were taken at 1.4 K. PL measurements show initial red shifts and subsequent blue shifts with increased annealing times. These shifts were accompanied by a decrease in the intensity of the PL peaks. PDS absorption data were measured at room temperature for the as-grown materials and for the 45 seconds RTA. The PDS data measured at room temperature for 0 and 45 seconds RTA were consistent with the PL data. The spectral shifts may indicate a competition between the effects of thermally driven strain relaxation and chemical interdiffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 453
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Jackson, W.B., Amer, N.M., Boccara, A., and Fournier, D., Applied Optics, 20, 1333, (1981).Google Scholar
2. Penna, A.F.S., Shah, Jagdeep, DiGiovanni, A.E., Cho, A.Y., and Gossard, A.C., Appl. Phys. Lett., 42 (6), 591–593, (1985).Google Scholar
3. Niki, S., Lin, C.L., Chang, W.S.C., and Wieder, H.H., Applied Physics Letters, 51 (13), (1989).Google Scholar
4. Neuberger, M., Handbook of Electronic Materials. Vol, 2. III-y Semiconducting Compounds, (TFI/Plenum, New York-Washington-London, 1971), p.53.CrossRefGoogle Scholar
5. Olsen, J.A., Hu, E.L., Myers, D.R., Klem, J.F., and Skumanich, A., (to be published).Google Scholar