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Rapid Annealing of Silicon

Published online by Cambridge University Press:  22 February 2011

R. T. Hodgson ,
V. Deline ,
S. M. Mader ,
F. F. Morehead  and
J. Gelpey
R. T. Hodgson
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598;
V. Deline
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598;
S. M. Mader
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598;
F. F. Morehead
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598;
J. Gelpey
Affiliation:
Eaton Ion Implantation Systems, 16 Tozer Road, Beverly, MA 01915
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Abstract

Silicon implanted with arsenic or boron has been annealed with a 100kW argon arc lamp turned on for a few seconds until the wafer temperature was in the 850–1250°C temperature range. The differences in defect behavior between such rapid annealing and furnace annealing is pointed out, and the dopant diffusion is measured. Aside from an initial movement of the boron atoms left in interstitial positions after the implant, diffusion of the boron and arsenic is consistent with standard diffusion models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 253
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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