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Raman Vibrational Study of Pulsed Laser Annealing of Implanted GaAs

Published online by Cambridge University Press:  22 February 2011

J. Sapriel  and
Y.I. Nissim
J. Sapriel
Affiliation:
Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 rue de Paris, 92220 Bagneux - (FRANCE)
Y.I. Nissim
Affiliation:
Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 rue de Paris, 92220 Bagneux - (FRANCE)
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Abstract

The lattice reconstruction produced by a pulsed laser irradiation in heavily damaged GaAs layers is studied. Spatially resolved Raman measurements are used to characterize the crystalline quality after the annealing cycle produced by a O-switched Ruby laser or by a picosecond pulsed Nd-YAG laser. The continuous evolution in the Raman spectra is usèd to follow the crystal recovery as a function of the irradiation parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 713
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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