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Raman Studies of GaNP Alloy

Published online by Cambridge University Press:  21 March 2011

I. A. Buyanova ,
W. M. Chen ,
E. M. Goldys ,
H. P. Xin  and
C. W. Tu
I. A. Buyanova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
W. M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
E. M. Goldys
Affiliation:
Division of Information and Communication Sciences, Macquarie University, NSW 2109 Sydney - Australia 3Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093-0407, USA
H. P. Xin
Affiliation:
Division of Information and Communication Sciences, Macquarie University, NSW 2109 Sydney - Australia 3Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093-0407, USA
C. W. Tu
Affiliation:
Division of Information and Communication Sciences, Macquarie University, NSW 2109 Sydney - Australia 3Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093-0407, USA
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Abstract

Raman scattering (RS) spectroscopy is employed to characterize the effect of nitrogen on structural properties of GaNxP1-x alloy with nitrogen composition up to 3 %. Two-mode behavior of the alloy is clearly shown. The frequency of the GaP-like LO phonons is found to decrease with N composition as –1.13 cm-1x. This dependence is proposed to be largely due to the biaxial strain in the GaNP epilayers, as a result of lattice mismatch to the GaP substrate. The frequency of the GaN-like phonons is found to be more sensitive to nitrogen content, increasing with the rate of +2.6 cm-1x. The addition of nitrogen is also found to cause a dramatic quenching of the two-phonon Raman scattering and an appearance of the zone edge GaP-like vibrations. These effects are suggested to reflect local distortion in the GaNP lattice induced by nitrogen, as well as possible clustering of N atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I5.4.1
Copyright
Copyright © Materials Research Society 2002

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References

1.1. Baillargeon, J. N., Cheng, K. Y., Holfler, G. E., Pearah, P. J., and Hsieh, K. C., Appl. Phys. Lett. 60, 2540 (1992).Google Scholar
2. Bellaiche, L., Wei, S.H., and Zunger, A., Appl. Phys. Lett. 70, 3558 (1997).Google Scholar
3. Shan, W., Walukiewicz, W., Yu, K. M., Wu, J., Ager, J. W. III, Haller, E. E., Xin, H. P., and Tu, C. W., Appl. Phys. Lett. 76, 3251 (2000).Google Scholar
4. Xin, H. P., and Tu, C. W., Appl. Phys. Lett. 76, 1267 (2000).Google Scholar
5. Thomas, D. G., and Hopfield, J. J., Phys. Rev. 150, 680 (1966).Google Scholar
6. Teicher, J M., Beserman, R., Klein, M. V., Moroç, H., Phys. Rev. B 29, 4652 (1984).Google Scholar
7. Schmeltzer, D., and Beserman, R., Phys. Rev. B. 22, 6330 (1980).Google Scholar
. Onabe, K., In: Material Research Society Symposium Proceedings v.449, edited by Ponce, F. A., Moustakas, T. D., Akasaki, I., and Monemar, B. (Pittsburgh, Pennsylvania, 1997), p. 23.Google Scholar