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Raman Spectroscopic Analysis of p-doped Bridged InP Nanowire

Published online by Cambridge University Press:  01 February 2011

Ataur Sarkar ,
M. Saif Islam ,
Sungsoo Yi  and
A. Alec Talin
Ataur Sarkar
Affiliation:
[email protected], University of California, Electrical and Computer Engineering, One Shields Avenue, Davis, CA, 95616, United States, 530-754-2257
M. Saif Islam
Affiliation:
[email protected], University of California, Electrical and Computer Engineering, One Shields Avenue, Davis, CA, 95616, United States
Sungsoo Yi
Affiliation:
[email protected], Currently at Advanced Labroratories, Philips Lumileds Lighting Company, Molecular Technology Laboratory, Agilent Technologies, San Jose, CA, 95131, United States
A. Alec Talin
Affiliation:
[email protected], Sandia National Laboratories, P.O. Box 969, Livermore, CA, 94551, United States
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Abstract

Raman spectroscopy was performed on magnesium (Mg) doped InP nanowires bridged between single crystal vertical silicon electrodes using a green laser (λ∼ 532 nm). First order TO-phonon and LO phonon-plasmon peaks observed at 305 cm−1 and 345 cm−1, respectively, are consistent with those for bulk single crystal InP. Misorientation of the nanowires is found to influence the TO and LO peak intensities. Bottom broadening up to ∼20 cm−1 of the TO peak due to the energy dispersion in the shifted Stokes spectrum is observed in long (∼6 μm) nanowires. Raman measurements indicated a trace of uncatalyzed InP on the insulating silicon oxide substrate and was verified through the electrical measurements of leakage currents before and after the nanowire growth. Initial investigation reveals that Raman spectroscopy can be a very useful in the study of nanowire heterostructures.

Keywords

Raman spectroscopyIII-Vnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1080: Symposium O – Semiconductor Nanowires–Growth, Physics, Devices and Applications , 2008 , 1080-O07-10
Copyright
Copyright © Materials Research Society 2008

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References

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