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Raman Spectra of MOCVD-Grown Ferroelectric PbTiO3 Thin Films

Published online by Cambridge University Press:  15 February 2011

Z. C. Feng ,
B. S. Kwak ,
A. Erbil  and
L. A. Boatner
Z. C. Feng
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
B. S. Kwak
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332; Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
A. Erbil
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332;
L. A. Boatner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Lead titanate (PbTiO3) has been grown on a variety of substrates by using the metalorganic chemical vapor deposition (MOCVD) technique. The substrates employed included Si, GaAs, MgO, fused-quartz, sapphire, and KTaO3. Raman spectra from these heterostructures are presented. All of the films exhibited the strong, narrow spectral features characteristic of PbTiO3 perovskite-oxide crystals and indicative of high crystalline quality. Temperature behaviors of the Raman modes, including the socalled “soft-mode”, were studied. A “difference-Raman” technique was used to distinguish the contributions of the PbTiO3 film and the KTaO3 single-crystal substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 75
Copyright
Copyright © Materials Research Society 1994

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References

1. Kwak, B. S., Boyd, E. P. and Erbil, A., Appl. Phys. Lett. 53, 1702, (1988).CrossRefGoogle Scholar
2. de Keijser, M., Dormans, G. J. M., Cillesen, J. F. M., de Leeuw, D. M. and Zandbergen, H. W., Appl. Phys. Lett. 58, 2636 (1991).Google Scholar
3. Kwak, B. S., Zhang, K., Boyd, E. P., Erbil, A., and Wilkens, B. J., J. Appl. Phys. 69, 767, (1991).Google Scholar
4. Kwak, B. S., Zhang, K., Erbil, A., Wilkens, B. J., Budai, J. D., Chisholm, M. F., and Boatner, L. A., in Ceramics Transaction Vol. 25: Symposium on Ferroelectric Films, ed. by Bhalla, A. F. and Nair, A. S. (American Ceramic Society, Westerville,1992) p. 203.Google Scholar
5. Burns, G. and Scott, B. A., Phys. Rev. B7, 3088 (1973).Google Scholar
6. Porto, S. P. S. and Krishnan, R. S., J. Chem. Phys. 47, 1009 (1967).CrossRefGoogle Scholar
7. Feng, Z. C., Kwak, B. S., Erbil, A., and Boatner, L. A., Appl. Phys. Lett., 62, 349 (1993).Google Scholar
8. Scott, J. F., Rev. Mod. Phys. 46, 83 (1974).Google Scholar
9. Tornberg, N. E. and Perry, C. H., J. Chem. Phys. 53, 2946 (1970).Google Scholar
10. Kwak, B. S., Erbil, A., Wilkens, B. J., Budai, J. D., Chisholm, M. F., and Boatner, L. A., Phys. Rev. Lett. 68, 3733 (1992).Google Scholar