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Raman Scattering Spectroscopy of GeSi/Si Strained Layer Superlattice

Published online by Cambridge University Press:  25 February 2011

Zhang Rong ,
Zheng Youdou ,
Gu Shulin  and
Hu Liqun
Zhang Rong
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, CHINA Fax: 86-25-302728
Zheng Youdou
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, CHINA Fax: 86-25-302728
Gu Shulin
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, CHINA Fax: 86-25-302728
Hu Liqun
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, CHINA Fax: 86-25-302728
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Abstract

Raman scattering measurements have been carried out on Si1-xGex/Si SLS. It is found that the Ge–Ge optic phonon frequency shift is proportional to strain in the SiGe film, and the Ge–Ge strain shift coefficient is 408cm−1. Based on these study a new method for analyzing the Raman spectra of SiGe/Si SLS has been proposed. Using the new method we can obtain the composition of the alloy sublayers as well as the strain in SLS. The strain distribution in the SiGe/Si SLS has been discussed, and strain in both SiGe and Si sublayers of the SLS have been calculated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 145
Copyright
Copyright © Materials Research Society 1993

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