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Raman Scattering in Ultra Heavily Doped Si and Ge: The Dependence on Free Carrier and Substitutional Dopant Densities

Published online by Cambridge University Press:  22 February 2011

A. Compaan ,
G. Contreras ,
M. Cardona  and
A. Axmann
A. Compaan*
Affiliation:
Max-Planck-Institut für Feskörperforschung Heisenbergstrasse 1, 7000 Stuttgart 80 Federal Republic of Germany
G. Contreras*
Affiliation:
Max-Planck-Institut für Feskörperforschung Heisenbergstrasse 1, 7000 Stuttgart 80 Federal Republic of Germany
M. Cardona
Affiliation:
Max-Planck-Institut für Feskörperforschung Heisenbergstrasse 1, 7000 Stuttgart 80 Federal Republic of Germany
A. Axmann
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik Eckerstrasse 4, 7800 Freiburg Federal Republic of Germany
*
+ A. von Humboldt fellow, permanent address Kansas State University, Manhattan, Kansas, USA
++ DAAD Fellow, on leave from E.S.F.M.-I.P.M. Edif. 6, U.P.A.L.M., Deleg. G.A. Madero, 07300 Mexico, D.F.
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Abstract

We present the results of a systematic study of phonon softening due to free electrons and holes in extremely heavily doped Si and Ge. Metastable concentrations of Bi, Sb, As, P, Al and B were implanted and pulsed laser annealed (ruby or XeCl) to produce substitutional concentrations up to 4×1021 cm−3 . We find softening of the zone center optic phonon of as much as ˜5% in p-type Ge, ˜5.4% in p-type Si, and 2% in n-type Si. The shifts are explained by phonon coupling to single particle electronic excitations. In addition we discuss the density dependence of the Raman-active vibrational local modes of P and Al in Ge and of B in Si which we demonstrate can provide a convenient measure of substitutional concentrations of these low mass dopants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 117
Copyright
Copyright © Materials Research Society 1984

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References

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