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Raman Scattering in Electrochemically Prepared Porous Silicon

Published online by Cambridge University Press:  15 February 2011

Y. -J. Wu ,
X. -S. Zhao  and
P. D. Persans
Y. -J. Wu
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
X. -S. Zhao
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Porous silicon of various porosity has been prepared by electrochemical etching of silicon with different doping levels. Room temperature photoluminescence in the visible range is observed from the powder scraped from the top layer of the etched samples. In this paper we use Raman scattering to characterize the source of the high efficiency photoluminescence. We have also studied microcrystalline silicon prepared by thermal annealing of hydrogenated amorphous silicon/amorphous silicon oxide multilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 69
Copyright
Copyright © Materials Research Society 1992

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References

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