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RAMAN SCATTERING AND X-RAY DIFFRACTION CHARACTERIZATION OF AMORPHOUS SEMICONDUCTOR MULTILAYER INTERFACES

Published online by Cambridge University Press:  28 February 2011

J. GONZALEZ ,
D.D. ALLRED ,
O.V. NGUYEN ,
D. MARTIN  and
D. PAWLIK
J. GONZALEZ
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D.D. ALLRED
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
O.V. NGUYEN
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D. MARTIN
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D. PAWLIK
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

In the present study, Raman spectroscopy (RS) and x-ray diffraction have been used to characterize semiconductor multilayer interfaces. A model for Raman spectra of multilayers is developed and applied to the specific case of the interfaces of a-Si/a-Ge multilayers. Quantification of the ‘blurring’ of interfaces is possible because RS is capable of directly ‘counting’ the total number of chemical bonds of a given type in the film. Multilayers, prepared by various deposition techniques, are compared. Several a-Si/a-Ge multilayers deposited by UHV evaporation (MBD) exhibit exceptionally sharp interfaces (intermixing width <l.0Å) and regular periodicities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 389
Copyright
Copyright © Materials Research Society 1986

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References

1. Kakalios, J., Fritzsche, H., Ibaraki, N. and Ovshinsky, S.R., J. of Non-Cryst. Solids, 66, 339 (1984).CrossRefGoogle Scholar
2. Abeles, B. and Tiedje, T., Phys. Rev. Lett., 51, 2003 (1983).Google Scholar
3.SPIE Conf. Proc. Wol. 563, in Application of Thin-Film Multilayer Structures to Figured X-Ray Optics (1985), see for example, p. 238Google Scholar
4. Underwood, J.H. and T.W. Barbee Jr., AIP Conf. Proc., No. 75 on Low Energy X-Ray Diagnostics, (1981)p. 170.Google Scholar
5. Maley, N. and Lannin, J.S., Phys. Rev. B, 31, 5577 (1985).CrossRefGoogle Scholar
6. Allred, D.D., Gonzales-Hernandez, J., and Nguyen, O.V., unpublished.Google Scholar
7. Agarwal, S.C. and Guha, S., Phys. Rev. B 31, 5547 (1985).Google Scholar
B. Tsu, R., Gonzalez-Hernandez, J., Doehler, J. and Ovshinsky, S.R., Solid State Comm., 46, 79 (1983).Google Scholar
9. Yndurian, F., Phys. Rev. Lett., 37, 1062 (1976).Google Scholar
10. Tsu, R., Gonzalez-Hernandez, J., Chao, S.S., Lee, S.C. and Tanaka, K., Appl. Phys. Lett., 40, 534 (1982).Google Scholar
11. Chao, S.S., Gonzalez-Hernandez, J., Martin, D. and Tsu, R., Appl. Phys. Lett., 46, 1089 (1985).Google Scholar
12.In applied Solid State Science, Ed., R. Wolfe (Academic, New York, 1969) p. 210.Google Scholar