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Raman And Photo-Luminescence Studies On Intrinsic And Cr-Doped Znse Single Crystals

Published online by Cambridge University Press:  10 February 2011

Brajesh K. Rai ,
S. Bhaskar ,
H. D. Bist ,
R. S. Katiyar ,
K.-T. Chen  and
A. Burger
Brajesh K. Rai
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras campus, San Juan, PR 00931.
S. Bhaskar
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras campus, San Juan, PR 00931.
H. D. Bist
Affiliation:
Permanent address: Physics Dept., IIT Kanpur, 208016.
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras campus, San Juan, PR 00931.
K.-T. Chen
Affiliation:
Center for Photonic Materials & Devices
A. Burger
Affiliation:
Dept of Physics, Fisk University,Nashville,TN
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Abstract

Single crystals of ZnSe, with varying amounts of Cr doping have been studied using Raman and photoluminescence(PL) spectroscopy. The Cr-doped samples show the existence of a coupling mechanism of longitudinal optical(LO) phonons of ZnSe with hole-plasmons. The dependence of intensity ratio of LO and transverse optical(TO) mode on temperature and excitation wavelength, has been attributed to the interaction of the field of LO phonons with the surface electric field in the depletion layer. The interaction of discreet phonons with the electronic continuum of conduction band in ZnSe is responsible for the shift of Raman peaks. The large electron capture cross-section of deep-level Cr2+ and Cr1+ impurities is inhibitive for the observation of band-to-band PL transition at ˜2.7eV in ZnSe:Cr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 511
Copyright
Copyright © Materials Research Society 1998

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References

1. Nishizawa, J-, Itoh, K-, Okuno, Y-, and Sakurai, F-, J. Appl. Phys. 57, 2210 (1985).Google Scholar
2. Haase, M A, Qiu, J, Depuydt, J M, and Cheng, H, Appl. Phys. Letts. 59, 1272 (1991).Google Scholar
3. Zhu, Z, Mori, H, and Yao, T, Appl. Phys. Letts. 61, 2811 (1992).Google Scholar
4. Yao, T and Okada, K, Japan J. Appl. Phys. 25, 821 (1986).Google Scholar
5. Kothadaraman, C, Neumark, G F, and Park, R M, AppI. Phys. Letts. 67, 3307 (1995).Google Scholar
6. Zheng, J-, Allen, J W, Yates, H M, and Williams, J O, J. Crystal growth 117, 358 (1992).Google Scholar
7. Page, R H, Schaffers, K I, Deloach, L D, Wilke, G D, Patel, F D, Tassano, J B, Jr., Payne, S A, Krupe, W F, Chen, K T, and Burger, A, IEEE J. of Quantum Electronics 33,609 (1997).Google Scholar
8. Rai, Brajesh Kumar, Masters thesis, Univ. of Puerto Rico, 1997.Google Scholar
9. Godlewski, M and Kaminska, M, J. Phys. C 13, 6537 (1980).Google Scholar
10. Taylor, W, Phys. Letts 24A, 556 (1967).Google Scholar
11. Schmidt, R L, Kunc, K, Cardona, M, and Bilz, H, Phys. Rev. B 20, 3345 (1979).Google Scholar
12. LaCombe, J L and Irwin, J C, Solid St. Comm. 8, 1427 (1970).Google Scholar
13. Olego, D J, Petruzzello, J, Marshall, T, and Cammack, D, Appl. Phys. Letts. 59, 961 (1991).Google Scholar
14. Abstreiter, G, Cardona, M, and Pinczuk, A, in Light Scattering in Solids, edited by Cardona, M. and Guntherodt, G. (Springer, New York, 1984), p. 5 and references therein.Google Scholar
15. Olego, D and Cadona, M, Phys. Rev. B24, 7217 (1981).Google Scholar
16. Pawlikowski, J M, Thin Solid Films 125, 213 (1995).Google Scholar
17. Grebe, G, Rousso, G and Schulz, H-J, J. Phys. C 9, 4511 (1976).Google Scholar