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Raman and magneto transport studies of MBE grown β-FeSi2, β-(Fe1-xCrx)Si2, and β-(Fe1-xCox)Si2

Published online by Cambridge University Press:  11 February 2011

A. Srujana ,
A. Wadhawan ,
K. Srikala ,
B.P. Gorman ,
R.J. Cottier ,
Wei Zhao ,
C.L. Littler ,
J.M. Perez ,
T.D. Golding  and
A.G. Birdwell
...Show all authors
A. Srujana
Affiliation:
Department of Physics and Materials Science, University of North Texas, Denton, TX 76203, USA
A. Wadhawan
Affiliation:
Department of Physics and Materials Science, University of North Texas, Denton, TX 76203, USA
K. Srikala
Affiliation:
Department of Physics and Materials Science, University of North Texas, Denton, TX 76203, USA
B.P. Gorman
Affiliation:
Department of Physics and Materials Science, University of North Texas, Denton, TX 76203, USA
R.J. Cottier
Affiliation:
Department of Physics and Materials Science, University of North Texas, Denton, TX 76203, USA
Wei Zhao
Affiliation:
Department of Physics and Materials Science, University of North Texas, Denton, TX 76203, USA
C.L. Littler
Affiliation:
Department of Physics and Materials Science, University of North Texas, Denton, TX 76203, USA
J.M. Perez
Affiliation:
Department of Physics and Materials Science, University of North Texas, Denton, TX 76203, USA
T.D. Golding
Affiliation:
Department of Physics and Materials Science, University of North Texas, Denton, TX 76203, USA
A.G. Birdwell
Affiliation:
Semiconductor Electronics Division, National Institute of Standards and Technology, 100 Bureau Drive, Stop 8121 Gaithersburg, MD 20899–8121, USA
W. Henrion
Affiliation:
Hahn-Meitner-Institute, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
M. Rebien
Affiliation:
Hahn-Meitner-Institute, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
P. Stauss
Affiliation:
Hahn-Meitner-Institute, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
R. Glosser
Affiliation:
Department of Physics, University of Texas at Dallas, Richardson, TX 75083, USA
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Abstract

Iron disilicide shows great promise as a silicon based light emitter operating in the 1.3 to 1.5 μm wavelength range. However, there exists a number of questions related to the band structure and the ability to alloy and controllably dope the material both n and p type. In this paper we present Raman and magneto transport studies on β-FeSi2, β-(Fe1-xCrx)Si2, and β-(Fe1-xCox)Si2 grown by MBE. By comparing the spectra obtained for undoped and doped samples we provide a general overview of the effects of doping on the crystallinity of the material. The temperature dependent (4K<T<300K) magneto transport illustrates that Cr is a p-type dopant and Co is an n-type dopant in β-FeSi2.The temperature dependence of the resistivity indicates that the transport properties at higher temperatures are determined by free carriers whereas at lower temperatures impurity band conduction prevails.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.43
Copyright
Copyright © Materials Research Society 2003

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