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Radiation Hardening of Simox Buried Oxide by Nitridation

Published online by Cambridge University Press:  22 February 2011

Pramod C. Karulkar  and
P. W. Wyatt
Pramod C. Karulkar
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108.
P. W. Wyatt
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108.
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Abstract

Radiation hardening of SIMOX buried oxides by nitridation is demonstrated in this paper. Bare SIMOX oxide substrates, obtained by selective reactive ion etching of the top silicon film, were nitrided by annealing in ammonia at a high temperature. Al-Si thin film capacitors were fabricated on the SIMOX oxide and also on concurrently processed dry thermal oxides of similar thickness. Radiation hardness was tested by C-V measurements before and after the exposure to x-rays in an ARACOR x-ray source. SIMOX oxides were found to be inherently more resistant to radiation damage than the thermal oxides. Nitridation improved the radiation hardness of SIMOX oxides similarly to that of thermal oxides. Reoxidation nearly reversed the radiation hardening effect of nitridation in these thick (> 300 nm) oxides. For example, the following shifts in the flat band voltage were obtained when the capacitors were biased with ±5 V on the Al-Si dots and exposed to 100 krad (SiO2): -24 V for SIMOX oxide, -14.2 V for nitrided SIMOX oxide, and -22.8 V for reoxidized nitrided SIMOX oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 587
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Guerra, M., in Silicon on Insulator Technology and Devices edited by Schmidt, D. N., Electrochem. Soc, Pennigton, N. J. 1990, p. 21.Google Scholar
2. Revesz, A. G., Myers, S. M., Brown, G. A., and Hughes, H. L., in Proc. 1992 IEEE International SOI Conf., Ponte Vedra Beach, IEEE Press, 1992, p.40.Google Scholar
3. Kato, T., Ito, T., Nakamura, T., and Ishikawa, H., J. Elec. Mat. 13, 913 (1982), and references therein.Google Scholar
4. Tsai, H-H, Wu, L-C, Wu, C-Y, and Hu, C., IEEE Elec. Dev. Lett. 8, 143 (1987).Google Scholar
5. Dunn, G. J. and Wyatt, P. W., IEEE Trans. Nucl. Sci. 36, 2161 (1989).Google Scholar
6. Terry, F. L., Aucoin, R. J., Naiman, M. L., and Senturia, S. D., IEEE Elec. Dev. Lett. 4, 191 (1983).Google Scholar
7. Allen, L. P., Genis, A., and Krull, W., in Proc. 1992 IEEE International SOI Conf., Ponte Vedra Beach (IEEE Press, 1992) p. 44.Google Scholar
8. Mao, B-Y, IEEE Trans. Nucl. Sci. 33, 1702 (1986).Google Scholar
9. Lawrence, R. K., Hughes, H. L., and Revesz, A. G., in Proc. 1992 IEEE International SOI Conf., Ponte Vedra Beach (IEEE Press, 1992) p. 106.Google Scholar
10. Revesz, A. G., in this proceeding volume, paper G10.1.Google Scholar