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Radiation Defect-Induced Lattice Contraction of InP

Published online by Cambridge University Press:  28 February 2011

C. R. Wie
Affiliation:
State University of New York at Buffalo, Dept. of Electrical and Computer Engineering, Amherst, N. Y. 14260
T. Jones
Affiliation:
California Institute of Technology Div. of Physics, Mathematics and Astronomy and, Engineering and Applied Sciences, Pasadena, CA 91125
T. A. Tombrello
Affiliation:
California Institute of Technology Div. of Physics, Mathematics and Astronomy and, Engineering and Applied Sciences, Pasadena, CA 91125
T. Vreeland Jr
Affiliation:
California Institute of Technology Div. of Physics, Mathematics and Astronomy and, Engineering and Applied Sciences, Pasadena, CA 91125
F. Xiong
Affiliation:
California Institute of Technology Div. of Physics, Mathematics and Astronomy and, Engineering and Applied Sciences, Pasadena, CA 91125
Z. Zhu
Affiliation:
California Institute of Technology Div. of Physics, Mathematics and Astronomy and, Engineering and Applied Sciences, Pasadena, CA 91125
G. Burns
Affiliation:
IBM Thomas Watson Research Center, Yorktown Heights, New York 10598
F. H. Dacol
Affiliation:
IBM Thomas Watson Research Center, Yorktown Heights, New York 10598
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Abstract

We studied the lattice strain induced in the MeV ion bombarded InP crystals and the annealing behaviors of lattice strain, Raman line shift, and linewidth. The lattice spacing for the planes parallel to the surface decreases as a result of irradiation, and amounts to a strain of −0.061% for (100) face, −0.056% for (110) face, and −0.050% for (111) face for 15 MeV Cl bombarded samples to a dose of 1.25E15 ions/cm2. The negative lattice strain, Raman line shift, and line width completely recover at 450°C, and show a major recovery stage at 250°C – 350°C.

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Articles
Copyright
Copyright © Materials Research Society 1987

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