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Radiation Damage of SiO2/Si By Energetic Neutral Beam and Vjuv Photons

Published online by Cambridge University Press:  25 February 2011

Tatsumi Mizutani ,
Shigeru Nishimatsu  and
Takashi Yunogami
Tatsumi Mizutani
Affiliation:
Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, Japan
Shigeru Nishimatsu
Affiliation:
Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, Japan
Takashi Yunogami
Affiliation:
Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, Japan
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Abstract

To clarify the generation mechanism of radiation damage induced in SiO2/Si by plasma processes, effects of three different beams, i.e., ions, neutrals and vacuum ultraviolet (VUV) photons have been evaluated independently. The radiation damage caused by these energetic bombardments has been measured by capacitance-voltage (C-V) measurements. These reveal that bombardments with a 250 eV Neo neutral beam generate + far less flat-band voltage shifts ( ΔVFB) than those with a Ne+ ion beam of equal kinetic energy. This c n be interpreted in terms of the differences in charge build-up and in hole production upon the incidence of these particles. VUV photons produced in the plasma are also responsible for large ΔVFB.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 605
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Coburn, J.W. and Winters, H.F., J.Appl.Phys. 50, 3189(1979).10.1063/1.326355Google Scholar
2. Mayer, T.M. and Barker, R.A., J.Vac.Sci.Technol. 21, 757(1982).10.1116/1.571821Google Scholar
3. Watanabe, T., Solid State Technol.1985 (April), 263.Google Scholar
4. DiMaria, R.J., Ephrath, L.M., and Young, D.R.,J.Appl.Phys. 50, 4015 (1979).10.1063/1.326481Google Scholar
5. Suzuki, K., Okudaira, S., Nishimatsu, S., Usami, K., and Kanomata, J., J.Electrochem.Soc. 129, 2764(1982).10.1149/1.2123675CrossRefGoogle Scholar
6. Robinson, R..J.Vac.Sci.Technol. 16, 185(1979).10.1116/1.569903CrossRefGoogle Scholar
7. Rapp, D. and Francis, W.E., J.Chem.Phys. 37, 2631(1962).10.1063/1.1733066Google Scholar
8. Mizutani, T. and Nishimatsu, S., J.Vac.Sci.Technol. A6, 1417(1988).10.1116/1.575717Google Scholar
9. Mizutani, T. and Nishimat, S., susubmitted to J.Vac.Sci.Technol.A.Google Scholar
10. Kunz, C. Synchrotron Radiation -Techniques and Application (Springer-Verlag, 1979) pp.101.10.1007/978-3-642-81297-2Google Scholar
11. Powell, R.J. and Derbenwick, G.F., IEEE Trans.Nucl.Sci. NS–18, 99(1971).10.1109/TNS.1971.4326419Google Scholar
12. Hagstrum, H.D., Phys.Rev. 104, 309(1956).10.1103/PhysRev.104.309Google Scholar