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Radiation Damage in Si Avalanche Photodiodes by 1-Mev Fast Neutrons and 220-Mev Carbon Particles

Published online by Cambridge University Press:  10 February 2011

H. Ohyama ,
T. Hakata ,
E. Simoen ,
C. Claeys ,
Y. Takami ,
K. Hayama ,
J. Tokuyama ,
K. Shigaki ,
K. Kobayashi  and
H. Sunaga
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H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
T. Hakata
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Y. Takami
Affiliation:
Rikkyo University, 2-5-1 Nagasaka Yokosuka Kanagawa, 240-01Japan
K. Hayama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
J. Tokuyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
K. Shigaki
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
K. Kobayashi
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
H. Sunaga
Affiliation:
Takasaki JAERI, 1233 Watanuki Takasaki Gunma, 370-12Japan
K. Miyahara
Affiliation:
Kumamoto University, 39-1 Kurokami Kumamoto, 860Japan
M. Hososhima
Affiliation:
Japan Electronic Materials Co., 2-5-13, Amagasaki, Hyogo, 660Japan
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Abstract

Results are presented of a study on the degradation of the electrical and optical performance of n+p Si avalanche photodiodes, subjected to 1-MeV fast neutrons and to a 220-MeV carbon irradiation. The dark current increases after irradiation, while the photo current decreases. Two dominant hole capture levels, which are responsible for the degradation of performance, are after irradiation observed by DLTS (Deep Level Transient Spectroscopy). The degradation caused by neutron irradiation is smaller than that for carbon irradiation. The differences in the radiation damage are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 429
Copyright
Copyright © Materials Research Society 1998

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