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Quenched-In Defects in CW Laser-Annealed Si

Published online by Cambridge University Press:  15 February 2011

N.H. Sheng  and
J.L. Merz
N.H. Sheng
Affiliation:
Department of Electrical and Computer Engineering University of California, Santa Barbara, CA 93106
J.L. Merz
Affiliation:
Department of Electrical and Computer Engineering University of California, Santa Barbara, CA 93106
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Abstract

DLTS has been used to investigate the nature of CW laser-induced defects in ion-implanted Si. A dominant hole trap (∼Ev + 0.45 eV), whose concentration depends on laser power, was observed immediately after sample preparation. This defect is not stable at room temperature; instead, it decays as a function of time, transmuting to a shallow level at Ev + 0.10 eV. The recovery of the Ev + 0.45 eV level can be stimulated by low temperature thermal annealing or by minority carrier injection. By comparing these defects in laser-annealed samples with defects produced by furnace annealing followed by rapid cooling, and with other published results, the laser-induced defects have beenidentified as interstitial Fe and Fe-B pairs. Experiments suggest that elevated substrate temperature during laser annealing may inhibit the formation of these deep hole traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 313
Copyright
Copyright © Materials Research Society 1982

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References

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