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Quaternary Phase Equilibria in the Ti-Si-N-O System: Stability of Metallization Layers and Prediction of Thin Film Reactions

Published online by Cambridge University Press:  25 February 2011

A.S. Bhansali  and
R. Sinclair
A.S. Bhansali
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305.
R. Sinclair
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305.
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Abstract

During high temperature circuit fabrication, metallization layers can come in contact with both solids and gases. Their stability can be addressed with the aid of phase equilibria. Using the Gibbs phase rule as a basis, a method for generating phase diagrams for multicomponent systems can be established. This procedure is described and illustrated by reference to the quaternary phase diagram of Ti-Si-N-O. This phase diagram can then be used to predict stability and/or reactions in metallization layers and thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 71
Copyright
Copyright © Materials Research Society 1989

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