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Quantum-Cross Tunneling Junction for High Density Memory

Published online by Cambridge University Press:  01 February 2011

Hideo Kaiju ,
Kenji Kondo  and
Akira Ishibashi
Hideo Kaiju
Affiliation:
[email protected], Hokkaido University, Research Institute for Electronic Science, Kita-12, Nishi-6, Sapporo, 060-0812, Japan, +81(Japan)-11-706-2878, +81(Japan)-11-706-2883
Kenji Kondo
Affiliation:
[email protected], Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, 060-0812, Japan
Akira Ishibashi
Affiliation:
[email protected], Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, 060-0812, Japan
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Abstract

We calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.

Keywords

nanoscalememorysimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 961: Symposium O – Nanostructured and Patterned Materials for Information Storage , 2006 , 0961-O05-05
Copyright
Copyright © Materials Research Society 2007

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References

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