Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-09T09:09:03.406Z Has data issue: false hasContentIssue false
  • English
  • Français

Quantum Well Nanopillar Transistors

Published online by Cambridge University Press:  01 February 2011

Shu-Fen Hu  and
Chin-Lung Sung
Shu-Fen Hu
Affiliation:
[email protected], National Nano Device Laboratories, RDT, 26, Prosperity Road I, science-based Industrial Park, Hsinchu, Taiwan, 30078, Taiwan, +886-35726100, +886-45722715
Chin-Lung Sung
Affiliation:
[email protected], National Nano Device laboratories, 26, Properity road I, Science-based Industrial Park, Hsinchu, Taiwan, 30078, Taiwan
Get access

Abstract

We have fabricated vertical quantum well nanopillar transistors that consist of a vertical stack of coupled asymmetric quantum wells in a poly-silicon/ silicon nitride multilayer nano-pillars configuration with each well having a unique size. The devices consist of resonant tunneling in the poly-silicon/ silicon nitride stacked pillar material system surrounded by a Schottky gate. The gate electrode surrounds half side of a silicon pillar island, and the channel region exists at all the pillar silicon island. Current-voltage measurements at room temperature show prominent quantum effects due to electron resonance tunneling with side-gate. Accordingly, the vertical transistor offers high-shrinkage feature. By using the occupied area of the ULSI can be shrunk to 10% of that using conventional planar transistor. The small-occupied area leads to the small capacitance and the small load resistance, resulting in high speed and low power operation.

Keywords

electrical propertiesnanostructurenitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D03-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Phys. World 13, 12 (2000); also at http://www.bell labs.com/news/1999/november//vertical.pdf.Google Scholar
2 Nakazato, K., Itoh, K., Mizuta, H., and Ahmed, H., Electron. Lett. 35, 848 (1999).Google Scholar
3 Tarucha, S., Austing, D. G., and Honda, T., Phys. Rev. Lett. 77, 3613 (1996).Google Scholar
4 Fukuda, H., Hoyt, J. L., McCord, M. A., and Pease, R. F. W., Appl. Phys. Lett. 70, 333 (1997).Google Scholar
5 Fukuda, H., Hoyt, J. L., McCord, M. A., and Pease, R. F. W.,Appl. Phys. Lett. 70, 333 (1997).Google Scholar
6 Pooley, D. M., Ahmed, H., Mizuta, H. and Nakazato, K., Coulomb blockade in silicon nano-pillars, Appl. Phys. Lett. 74, 2191 (1999).Google Scholar
7 Pooley, D. M., Ahmed, H., and Lloyd, N. S., Fabrication and electron transport in multilayer silicon-insulator-silicon nanopillars, J. Vac. Sci. Technol. B 17., 3235 (1999).Google Scholar
8 Pooley, D. M., Ahmed, H., Mizuta, H. and Nakazato, K., Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers, J. Appl. Phys. 90, 4772 (2001).Google Scholar
9 Lewis, P. A., Alphenaar, B. W., and Ahmed, H., Measurements of geometric enhancement factors for silicon nanopillar cathodes using a scanning tunneling microscope, Appl. Phys. Lett. 79, 1348 (2001).Google Scholar
10 Ingold, G. L. and Nazarov, Yu. V., in Single Charge Tunneling, edited by Grabert, H. and Devoret, M. (Plenum, New York, 1992).Google Scholar
11 Pohjola, T., Dynamical Properties of Single-electron Devices and Molecular Magnets, PhD. Thesis of Helsinki University of Technology, Finland, 2001.Google Scholar
12 Oosterkamp, T. H., Fujisawa, T., Wiel, W. G. van der, Ishibashi, K., Hijman, R. V., Tarucha, S., and Kouwenhoven, L. P., Nature 395, 873 (1998)Google Scholar