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Quantum Transport in Ion Beam Synthesized Cobalt Disilicide Wires

Published online by Cambridge University Press:  03 September 2012

D. Lenssen ,
S. Mesters  and
S. Mesters
D. Lenssen
Affiliation:
Institute for Thin Film and Ion Technology (ISI), Forschungszentrum Jiilich GmbH, D - 52425 Jiilich, Germany
S. Mesters
Affiliation:
Institute for Thin Film and Ion Technology (ISI), Forschungszentrum Jiilich GmbH, D - 52425 Jiilich, Germany
S. Mesters
Affiliation:
Institute for Thin Film and Ion Technology (ISI), Forschungszentrum Jiilich GmbH, D - 52425 Jiilich, Germany
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Abstract

Submicrometer cobalt disilicide wires in Si(100) were fabricated by ion beam synthesis. We implanted cobalt ions through the openings of an implant mask made by direct electron beam writing. The formation of the wires was achieved by rapid thermal annealing at temperatures up to 1100°C for 10s. The produced wires have thicknesses of about 85 nm and widths depending on the widths of the implant mask which were varied between 1 μm and 100 nm. These wires were characterized by means of cross-section transmission electron microscopy and magnetoresistance measurements at low temperatures. The results can be well explained by weak localization with strong spirn-orbit scattering and superconducting fluctuation (Maki-Thompson) corrections.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 295
Copyright
Copyright © Materials Research Society 1997

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