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Quantum Dot Growth in the Si-Ge-C System Through Multi-Step Procedure

Published online by Cambridge University Press:  10 February 2011

Yutaka Wakayama ,
Gerhard Gerth ,
Peter Werner  and
Leonid V. Sokolov
Yutaka Wakayama
Affiliation:
Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, [email protected]
Gerhard Gerth
Affiliation:
Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, [email protected]
Peter Werner
Affiliation:
Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, [email protected]
Leonid V. Sokolov
Affiliation:
Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch Lavrentieva 13, 630090 Novosibirsk, Russia
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Abstract

To fabricate nanometer-sized Ge dots on Si(100), we have investigated multi-step procedure, involving low temperature deposition of a Ge layer, a sub-monolayer C on a Ge wetting layer, a Ge top layer for three-dimensional (3D) dot formation and post-annealing. Effects of each procedure were discussed on the basis of an atomic force microscope study. 10nm-sized Ge dots with a high number density in the order of 1011 cm−2 were grown on the Si(100) substrate by combining each procedure and optimizing experimental conditions, such as deposition temperature, the C layer thickness and post-annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 135
Copyright
Copyright © Materials Research Society 2000

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References

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