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Quantitative Icts Measurement of Interface States at Grain Boundaries in ZnO Varistors

Published online by Cambridge University Press:  10 February 2011

K. Mukae  and
A. Tanaka
K. Mukae
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, 240–01JAPAN, [email protected]
A. Tanaka
Affiliation:
Fuji Electric Corporate Research and Development, Ltd., Yokosuka, 240–01JAPAN, [email protected]
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Abstract

Isothermal capacitance transient spectroscopy(ICTS) measurement is applied to ZnO:Pr varistors. A simple peak corresponding to the interface states at grain boundaries was obtained and the energy level of the interface states revealed to be monoenergetic and located around 0.9eV below the conduction band. The cross section was calculated as around 10−14 cm2. Quantitative treatment of the ICTS intensity in relation to the density of interface states at grain boundaries was established. The density of interface states was obtained from the linear relation between ICTS intensity and reciprocal carrier density(ND). According to experiments on series of rare-earth doped ZnO varistors, the interface states of Pr, Tb or Nd doped ZnO varistors had higher density of states than La or Er doped varistors. Moreover, application of ICTS measurement to single grain boundary using microelectrodes revealed that higher density of interface states gave higher nonlinearity in I-V characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 213
Copyright
Copyright © Materials Research Society 1998

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References

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