Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T02:17:43.020Z Has data issue: false hasContentIssue false

Quantitative High-Resolution Transmission Electron Microscopy of III-V Semiconductor Interfaces by Multivariate Statistical Analysis of Exit-Plane Wave Function Images

Published online by Cambridge University Press:  01 February 2011

Krishnamurthy Mahalingam
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPS, 3005 P St.,Wright-Patterson AFB, OH 45433-7707, U.S.A.
Kurt G. Eyink
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPS, 3005 P St.,Wright-Patterson AFB, OH 45433-7707, U.S.A.
Gail J. Brown
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPS, 3005 P St.,Wright-Patterson AFB, OH 45433-7707, U.S.A.
Donald L. Dorsey
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPS, 3005 P St.,Wright-Patterson AFB, OH 45433-7707, U.S.A.
Get access

Abstract

The application of exit-plane wave function (EPWF) images for an atomic-scale compositional mapping of interfaces in the GaAs-AlAs system is investigated. Image simulations based on the multislice algorithm were performed to obtain EPWF images over a wide range of compositions and specimen thicknesses. The EPWF-amplitude images were further analyzed by the method of factorial analysis of correspondence. A simultaneous analysis of the effects both thickness and composition on image contrast yielded two eigenvectors representing the individual contributions from the two effects. This separation was however not complete, leaving a residual contribution from thickness on the composition-sensitive eigenvector and vice versa. Extraction of the chemical content from the composition-sensitive eigenvector is still possible by a parameterization of the residual thickness contribution. A simpler procedure for quantifying the composition across an interface is proposed based on the analysis of images of AlxGa(1-x)As with different Al/Ga composition but same specimen thickness.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ourmazd, A., Baumann, F. H., Bode, M. and Kim, Y., Ultramicroscopy 34, 237 (1990).Google Scholar
2. Thoma, S. and Cerva, H., Ultramicroscopy 38, 265 (1991).Google Scholar
3. Rosenauer, A., Fischer, U., Gerthsen, D., Forster, A., Ultramicroscopy 72, 121 (1998).Google Scholar
4. Coene, W. M. J., Thust, A., Beeck, M. Op de, Dyck, D. Van, Ultramicroscopy 64, 167 (1996).Google Scholar
5. O'keefe, M. A., Hetherington, C. J. D., Wang, Y. C., Nelson, E. C., Turner, J. H., Kisielowski, C., Malm, J. O., Mueller, R., Ringnalda, J., Pan, M. and Thust, A., Ultramicroscopy 89, 215 (2001).Google Scholar
6. Thust, A., Coene, W. M. J., Beeck, M. Op de, Dyck, D. Van, Ultramicroscopy 64, 211 (1996).Google Scholar
7. Trebbia, P. and Bonnet, N., Ultramicroscopy 34, 165 (1990).Google Scholar
8. Aebersold, J. E., Stadelman, P. A. and Rouviere, J. L., J. Microsc. 62, 171 (1996).Google Scholar
9. Maunowski, E. R. and Howery, D. G., Factor Analysis in Chemistry,(Wiley-Interscience, 1980) pp. 23.Google Scholar
10. Bonnet, N., J. Microsc. 190, 2 (1990).Google Scholar
11. Roviere, J. L. and Bonnet, N., Inst. Phys. Conf. Ser. 134, 11 (1993).Google Scholar
12. Okeefe, M. A., High-Resolution Transmission Electron Microscopy and Associated Techniques, ed. Buseck, P., Cowley, J. and Eyring, L. (Oxford University Press, 1988) pp. 244.Google Scholar
13. Kisielowski, C., Schwander, P., Baumann, P., Seibt, F. H., Kim, M. and Ourmazd, A., Ultramicroscopy 58, 131 (1995).Google Scholar