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Quantitative Depth Profiling Resonance Ionization Mass Spectrometry of III-V Heterostructure Semiconductors

Published online by Cambridge University Press:  26 February 2011

A. B. Emerson ,
S. W. Downey  and
R. F. Kopf
A. B. Emerson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
S. W. Downey
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
R. F. Kopf
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Resonance ionization mass spectrometry (RIMS) of neutral atoms sputtered from III-V heterostructure semiconductor materials provides quantitative information about the dopant position near interfaces. The prerequisite for quantitative results is the saturation of the ionization step. The absolute signals are affected by primary ion beam parameters which affect sputter yield, atomization efficiency and quantum state partitioning, but not ionization efficiency. We have found that matrix effects are minimal and use RIMS results to help elucidate dopant migration near interfaces and interpret SIMS matrix effects. Device performance and understanding of materials growth are both aided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 105
Copyright
Copyright © Materials Research Society 1992

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References

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