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Quantitative Charge Imaging of Silicon Nanocrystals by Atomic Force Microscopy

Published online by Cambridge University Press:  11 February 2011

Tao Feng  and
Harry A. Atwater
Tao Feng
Affiliation:
Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A.
Harry A. Atwater
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, U.S.A.
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Abstract

Quantitative understanding of charging and discharging of Si nanocrystals in SiO2 films on Si substrate is essential to their application in floating gate nonvolatile memory devices. Charge imaging by atomic force microscopy (AFM) or electrostatic force microscopy (EFM) can provide qualitative information on such system, while a further step is needed. We have developed a generalized method of images, which can solve Poisson equation for multiple dielectric layers, to simulate the charge imaging of Si nanocrystals by non-contact mode AFM under different sample geometries. Simulated images can be compared with experimental images thoroughly to estimate the total amount and distributions of trapped charges, which is also useful in the study of time evolution of charges or dissipation problems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F1.7
Copyright
Copyright © Materials Research Society 2003

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References

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