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Quantitative Analysis of Electromigration-Induced Damage in Al-Based Interconnects

Published online by Cambridge University Press:  15 February 2011

O. Kraft ,
J. E. Sanchez Jr.  and
E. Arzt
O. Kraft
Affiliation:
Max-Planck Institut für Metallforschung, and Institut für Metallkunde, University of Stuttgart, D-7000 Stuttgart, Germany
J. E. Sanchez Jr.
Affiliation:
Max-Planck Institut für Metallforschung, and Institut für Metallkunde, University of Stuttgart, D-7000 Stuttgart, Germany
E. Arzt
Affiliation:
Max-Planck Institut für Metallforschung, and Institut für Metallkunde, University of Stuttgart, D-7000 Stuttgart, Germany
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Abstract

Electromigration in metal interconnect lines produces sites of damage, such as voids, hillocks and whiskers, which by definition are the sites of flux divergence in the lines. Detailed observations of damage volume and morphology, especially in relation to the local microstructure, may yield vital information about the processes which produce the damage and ultimate failure in the interconnects. We present fractographic measurements of void volumes and the spacing between voids and corresponding hillocks in Al and Al-2% Cu interconnects which have been electromigration tested until failure. It is shown that the void density as well as the shape of failure voids depend on the current density. Further it is found that the distribution of the spacings between voids and corresponding hillocks changes as a function of current density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 119
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Blech, I.A., J. Appl. Phys. 47, 1203 (1976)CrossRefGoogle Scholar
2. Blech, I.A. and Herring, C., Appl.Phys. Lett. 29, 131 (1976)CrossRefGoogle Scholar
3. Blech, I.A. and Tai, K.L., Appl.Phys. Lett 30, 387 (1977)CrossRefGoogle Scholar
4. Black, J.R., IEEE Trans. Electr. Dev. 16, 338 (1969)CrossRefGoogle Scholar
5. Shatzkes, M. and Lloyd, J.R., J. Appl. Phys. 59, 3890 (1986)CrossRefGoogle Scholar
6. Arzt, E. and Nix, W.D., J. Mat. Res. 6, 731 (1991)CrossRefGoogle Scholar
7. Ross, C.A., Mat. Res. Soc. Proc. 225, 35 (1991)CrossRefGoogle Scholar
8. Arzt, E., Kraft, O., Sanchez, J., Bader, S. and Nix, W.D., Mat. Res. Soc. Proc.“Thin Films: Stresses and Mecanical Properties II” (1991)Google Scholar
9. Sanchez, J.E. Jr., McKnelly, L.T. and Morris, J.W. Jr., J. El. Mat. 19, 1213 (1990)CrossRefGoogle Scholar
10. Ross, C.A., Drewery, J.S., Somekh, R.E. and Evett, J.E., J. Appl. Phys. 66, 2349 (1989)CrossRefGoogle Scholar
11. Venkatraman, R. and Bravman, J.C., Mat. Res. Soc. Proc.“Thin Films: Stresses and Mecanical Properties III” (1991)Google Scholar
12. Cocks, A.C.F. and Ashby, M.F., Progr. Mat. Sci. 17, 189 (1982)CrossRefGoogle Scholar