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Qualitative Physics of Defects in Quantum Wells: Interface Roughness

Published online by Cambridge University Press:  25 February 2011

Harold P. Hjalmarson
Harold P. Hjalmarson*
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185.
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Abstract

The electronic properties of interface roughness in a quantum well are described. Interface roughness is shown to always produce localized bound states. Thus intrinsic roughness can explain the giant oscillator strength observed for “free” excitons in quantum wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 361
Copyright
Copyright © Materials Research Society 1990

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