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Qualitative Model for Surface Rippling of Zone Melting Recrystallized Silicon-on-Insulator Layers

Published online by Cambridge University Press:  25 February 2011

Paul W. Mertens  and
Herman E. Maes
Paul W. Mertens
Affiliation:
Interuniversity Micro-Electronics Center, Kapeldreef 75, B-3030 Leuven, Belgium
Herman E. Maes
Affiliation:
Interuniversity Micro-Electronics Center, Kapeldreef 75, B-3030 Leuven, Belgium
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Abstract

In zone melting recrystallization (ZMR) of thin silicon films different mechanisms can lead to thickness variations of the obtained silicon film. In this paper we will concentrate on some of these phenomena. One is the large scale mass transport, which typically leads to a thinned region at the start of the ZMR process. Another one, which is to a certain extent related to the first one, is the typical ripple formation that occurs especially under conditions that are commonly referred to as “low thermal gradient” regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 461
Copyright
Copyright © Materials Research Society 1990

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References

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