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PVT Growth of 6H SiC Crystals and Defect Characterization
Published online by Cambridge University Press: 15 March 2011
Abstract
SiC single crystals have been grown by seeded sublimation method using physical vapor transport (PVT) system designed and fabricated in our laboratory. A novel multi-segmented graphite insulation has been used for improved heat containment in the hot-zone. Numerical modeling was used to obtain the temperature field and predict various growth parameters. The grown crystals were characterized using AFM, SWBXT and chemical etching.
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- Copyright © Materials Research Society 2004
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