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Pulse-Duration-Dependent-Free-Carrier-Absorption in Semiconductors

Published online by Cambridge University Press:  25 February 2011

P. Mukherjee ,
M. Sheik-Bahaei  and
H.S. Kwok
P. Mukherjee
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bell Hall, AmherstNY14260
M. Sheik-Bahaei
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bell Hall, AmherstNY14260
H.S. Kwok
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bell Hall, AmherstNY14260
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Abstract

The free carrier absorption in InSb was found to depend on the pulse duration of the picosecond CO2 laser pulse. This is interpreted as the effect of incomplete carrier relaxation within the laser pulse duration. An electron energy relaxation time of 5.6 ps was derived from the observation. The present experiment presents a new method of measuring relaxation times in semiconductors and metals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 97
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

[1] Yu, Z.Y. and Tang, C.L., Appl. Phys. Lett. 44, 1235(1984).Google Scholar
[2] Wiener, A., presented at Third Topical Meeting on Ultrafast Phenomena, Monterey, CA 1984.Google Scholar
[3] Kwok, H.S. and Yablonovitch, E., Appl. Phys. Lett. 30, 158(1977)Google Scholar
[4] Sheik, M., Kwok, H.S., to be published.Google Scholar
[5] Hasselbeck, M. and Kwok, H.S., Appl. Phys. Lett. 41, 1204(1982)Google Scholar
[6] Kobayashi, T., J. Appl. Phys. 48, 3154(1977).Google Scholar
[7] Corkum, P., Opt. Lett. 8, 514(1983).Google Scholar
[8] Jensen, B., IEEE J. Ouant. Elect. QE–18, 136(1982).Google Scholar