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Pulsed UV Laser Irradiation of ZNS Films on SI and GAAS

Published online by Cambridge University Press:  15 February 2011

H.S. Reehal ,
C.B. Thomas ,
J.M. Gallego ,
G. Hawkins  and
C.B. Edwards
H.S. Reehal
Affiliation:
Department of Applied Physics, University of Bradford, BD7 1DP, U.K.
C.B. Thomas
Affiliation:
Department of Applied Physics, University of Bradford, BD7 1DP, U.K.
J.M. Gallego
Affiliation:
Department of Applied Physics, University of Bradford, BD7 1DP, U.K.
G. Hawkins
Affiliation:
Department of Applied Physics, University of Bradford, BD7 1DP, U.K.
C.B. Edwards
Affiliation:
Laser Division, SERC Rutherford Appleton Laboratory, Chilton, Oxon, U.K.
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Abstract

Pulsed XeCl (308 nm) and XeF (351 nm) laser annealing of undoped and Mn-implanted single crystal and polycrystalline ZnS films deposited upon either Si or GaAs substrates is described. Annealing energy densities in the range ~0 .6–2.5 J cm−2 have been employed, with the specimens held under an Ar environment at ~ 100–200 psig pressure. Film thicknesses in the range ~0.2–1.0 μm have been investigated, with the substrates cleaned in various ways prior to deposition. In all the cases investigated, laser annealing results in polycrystalline regrowth of the films as shown by RHEED analysis. Furthermore the RHEED patterns obtained are consistent with the presence of both the cubic and the hexagonal phases of ZnS, except for thin (~0.2 μm thick) films annealed above ~ 2 J cm−2. These show a purely cubic structure on both Si and GaAs, possibly due to regrowth from the underlying cubic substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 677
Copyright
Copyright © Materials Research Society 1983

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References

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