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Pulsed Low-energy Ion-beam Induced Nucleation and Growth of Ge Nanocrystals on SiO2

Published online by Cambridge University Press:  01 February 2011

Anatoly Dvurechenskii ,
Nataly Stepina ,
Pavel Novikov ,
Vladislav Armbrister ,
Valery Kesler ,
Anton Gutakovskii ,
Victor Kirienko ,
Zhanna Smagina  and
Reiner Groetzschel
Anatoly Dvurechenskii
Affiliation:
[email protected], Institute of Semiconductor Physics, Physics Siberian Branch of Russian Academy of Sciences, Pr. Lavrent'eva, 13, Novosibirsk, 630090, Russian Federation
Nataly Stepina
Affiliation:
[email protected], Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Pavel Novikov
Affiliation:
[email protected], Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Vladislav Armbrister
Affiliation:
[email protected], Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Valery Kesler
Affiliation:
[email protected], Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Anton Gutakovskii
Affiliation:
[email protected], Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Victor Kirienko
Affiliation:
[email protected], Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Zhanna Smagina
Affiliation:
[email protected], Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Reiner Groetzschel
Affiliation:
[email protected], Forschungszentrum Rossendorf, Dresden, D-01314, Germany
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Abstract

Pulsed low-energy (200 eV) ion-beam-induced nucleation during Ge deposition on thin SiO2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO2 surface. This results both in decrease of the average nanocrystal size and in increase of nanocrystal density.

Keywords

nanostructureGeion-beam assisted deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1020: Symposium GG – Ion-Beam-Based Nanofabrication , 2007 , 1020-GG06-11
Copyright
Copyright © Materials Research Society 2007

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