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Pulsed Laser Annealing of Ion Implanted Ge

Published online by Cambridge University Press:  15 February 2011

O. W. Holland ,
J. Arayan ,
C. W. White  and
B. R. Appleton
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Arayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

Ion backscattering/channeling and transmission electron microscopy (TEM) were used to investigate the annealing behavior of ion implanted Ge single crystals using a Q-switched ruby laser. The impurities studied were Bi, In, Sb and Pb, which were implanted at liquid nitrogen temperature into both (100) and (111) crystal orientations. A rather unique damage structure which can form during room temperature implantation of Ge is discussed. Maximum substitutional concentrations, which far exceed the retrograde maxima, are reported for all the dopants studied in (100)Ge. The maximum concentrations were limited by an interfacial instability during epitaxial growth following laser irradiation which led to the formation of a well-defined cellular structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 297
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

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