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Pulsed Ion Beam Annealing Of Nickel Thin Films on Silicon

Published online by Cambridge University Press:  15 February 2011

L.J. Chen ,
L.S. Hung ,
J.W. Mayer  and
J.E.E. Baglin
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J.E.E. Baglin
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

High power pulsed ion beams have been applied to anneal nickel thin films on silicon. RBS and TEM have been performed to study ion beam induced effects. With Ba+ ion beams at energy densities greater than 0.7 J/cm2 and H+ beams above about 1.3 J/cm2, cellular structures were found. At about 0.6 J/cm2 for Ba+ (about 1.0 J/cm2 for H+), epitaxial NiSi2 was formed. At lower energy densities, polycrystalline layers containing a mixture of silicide phases were observed. With ion beam annealing, melting starts at the Ni/Si interface and epitaxy was found at energy densities well below that required to melt Ni or crystalline Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 319
Copyright
Copyright © Materials Research Society 1982

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Footnotes

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Permanent address: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, China.

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Permanent address: Institute for Nuclear Study, Shanghai, China.

References

REFERENCES

1.Poate, J.M., Leamy, H.J., Sheng, T.T. and Celler, G.K., Appl. Phys. Lett. 33, 918 (1978).Google Scholar
2.van Gurp, G.J., Eggermont, G.E.J., Tamminga, Y., Stacy, W.T. and Gjsbers, J.R.M., Appl. Phys. Lett. 35, 273 (1979).Google Scholar
3.Wittmer, M. and von Allmen, M., J. Appl. Phys. 50, 4786 (1979).Google Scholar
4.Wittmer, M., Proc. of the Symposium on Thin Film Interfaces and Interactions (eds. Baglin, J.E.E. and Poate, J.M.), 423, The Electrochem. Soc. Inc. (1980).Google Scholar
5.Hodgson, R.T., Baglin, J.E.E., Pal, R., Neri, J.M. and Hammer, D.A., Appl. Phys. Lett. 37, 187 (1980).Google Scholar
6.Baglin, J.E.E., Hodgson, R.T., Chu, W.K., Neri, J.M., Hammer, D.A. and Chen, L.J., in press, Nucl. Inst. and Methods.Google Scholar
7.Lau, S.S., Mäenpää, M. and Mayer, J.W., Laser and Electron Beam Solid Interactions and Materials Processing, Materials Research Society, 547 (1980).Google Scholar
8.Chen, L.J., Hung, L.S. and Mayer, J.W., Proc. of 39th Ann. Meeting of EMSA,Atlanta, Georgia,166, Claitor's Publishing Co. (1981).Google Scholar
9.Chen, L.J., Hung, L.S. and Mayer, J.W., in press, Appl. of Surface Sci.Google Scholar
10.Cullis, A.G., Webber, H.C., Poate, J.M. and Simons, A.L., Appl. Phys. Lett. 36, 320 (1980).Google Scholar
11.Chiu, K.C.R., Poate, J.M., Feldman, L.C. and Doherty, C.J., Appl. Phys. Lett. 30, 544 (1980).Google Scholar
12.Matthews, J.W., Thin Solid Films, 25, 199 (1975).Google Scholar
13.Chen, L.J., unpublished.Google Scholar
14.Calculations by Thompson, M. and Galvin, G., Cornell University, unpublished.Google Scholar