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Pulsed Femtosecond Excimer Laser-Induced Chemically Clean Etching of Diamond

Published online by Cambridge University Press:  15 February 2011

A.P. Malshe
Affiliation:
Materials and Manufacturing Research Laboratory (MRL), Department of Mechanical Engineering and High Density Electronics Center (HiDEC), Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas, 72701
A.M. Ozkan
Affiliation:
Materials and Manufacturing Research Laboratory (MRL), Department of Mechanical Engineering and High Density Electronics Center (HiDEC), Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas, 72701
T.A. Railkar
Affiliation:
Materials and Manufacturing Research Laboratory (MRL), Department of Mechanical Engineering and High Density Electronics Center (HiDEC), Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas, 72701
P.A. Molian
Affiliation:
Department of Mechanical Engineering, Iowa State University, Ames, Iowa
W.D. Brown
Affiliation:
Materials and Manufacturing Research Laboratory (MRL), Department of Mechanical Engineering and High Density Electronics Center (HiDEC), Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas, 72701
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Abstract

Chemically clean etching of thermodynamically metastable diamond using a 500 femtosecond (fs), 248 nm KrF excimer laser is reported. The experimental results, characterized by micro-Raman spectroscopy indicate that unlike nanosecond (ns) pulsed laser processing of diamond, fs laser irradiation of the surface does not generate any graphite or amorphous carbon residues. Microstructural analysis of the fs pulsed laser etched surface indicates streaks.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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