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Pulsed Excimer Laser Processing of AlN/GaN Thin Films

Published online by Cambridge University Press:  10 February 2011

W. S. Wong ,
L. F. Schloss ,
G.S. Sudhir ,
B. P. Linder ,
K-M. Yu ,
E. R. Weber ,
T. Sands  and
N. W. Cheung
W. S. Wong
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
L. F. Schloss
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
G.S. Sudhir
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
B. P. Linder
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
K-M. Yu
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
E. R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
T. Sands
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
N. W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
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Abstract

A KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1011
Copyright
Copyright © Materials Research Society 1997

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References

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