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Pulsed Esr Study of Light-Induced Metastable Defects in 17O and 13C Incorporated a-Si:H

Published online by Cambridge University Press:  10 February 2011

S. Yamasaki
Affiliation:
Joint Research Center for Atom Technology - National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR), 1-1-4, Higashi, Tsukuba, Ibaraki 305, Japan
T. Umeda
Affiliation:
Joint Research Center for Atom Technology - National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR), 1-1-4, Higashi, Tsukuba, Ibaraki 305, Japan
J. Isoya
Affiliation:
Joint Research Center for Atom Technology - National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR), 1-1-4, Higashi, Tsukuba, Ibaraki 305, Japan University of Library and Information Science, 1-2, Kasuga, Tsukuba, Ibaraki 305, Japan
A. Matsuda
Affiliation:
Electrotechnical Laboratory, 1-1-4, Umezono,Tsukuba, Ibaraki 305, Japan
K. Tanaka
Affiliation:
Joint Research Center for Atom Technology - National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR), 1-1-4, Higashi, Tsukuba, Ibaraki 305, Japan
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Abstract

Hydrogenated amorphous silicon (a-Si:H) samples containing 17O (3 x 1019 cm-3, nuclear spin, I, = 5/2) and 13C (3 - 4 x 1017cm-3, I = 1/2) isotope impurities were used in the detailed pulsed electron spin resonance (ESR) and pulsed electron-nuclear double resonance (ENDOR) measurements to obtain information on the role of O and C impurities in lightinduced metastable dangling bonds in a-Si:H. No hyperfine structure related to 17O and 13C atoms was observed in echo detected ESR, electron spin echo envelope modulation (ESEEM) of pulsed ESR as well as pulsed ENDOR (Davies and Mims sequences), which suggests that O and C impurities are not directly involved in the formation of light-induced dangling bonds.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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