Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T07:43:19.067Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed Electron Beam Annealing Induced Deep Level Defects in Virgin Silicon

Published online by Cambridge University Press:  15 February 2011

D. Barbier ,
M. Kechouane ,
A. Chantre  and
A. Laugier
Get access

Abstract

DLTS has been used to investigate deep level defects induced by Pulsed Electron Beam Annealing (PEBA) in virgin (100) boron doped silicon. Various PEBA conditions were selected resulting in different molten layer thicknesses, melt front velocities and thermal gradient distributions. Discrete hole traps distributed in the regrowth layer were observed in all the annealed samples. The activation energies and thermal signatures of these levels do not correspond to already known defects except for one level which has been assigned to the carbon interstitial substitutional pair. Carbon contamination during irradiation is the most probable explanation for the creation of this defect. Other discrete hole trap levels are likely to be generated by quenching of the molten layer as far as their profiles do not extend beyond the regrowth layer. Moreover, a broad band of levels, characteristic of extended defects, has been observed only on the samples which have suffererd the highest thermal stresses. This band of levels might be related to the generation of dislocation networks as recently observed by means of T.E.M. on the same PEBA processed samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 449
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

+

INSA de Lyon, Laboratoire de Physique de la Matière, Bât. 502, 20 Avenue A. Einstein 69621 Villeurbanne Cedex (France)

++

CNET, B.P. 42, 38240 Meylan (France)

References

REFERENCES

1.Greenwald, A. C., Kirkpatrick, A. R., Little, R. G. and Minnucci, J. A.J. Appl. Phys. 50, 2, 783 (1979)Google Scholar
2.Barbier, D., Laugier, A. and Cachard, A., Proceedings of the International Meeting on the relationship between epitaxial growth conditions and the properties of semiconductor epitaxial layers. Perpignan. J. de Phys. Appl. (to be published) (1983)Google Scholar
3.Lang, D. V., J. Appl. Phys. 45, 3023 (1974)Google Scholar
4.Chantre, A., Kechouane, M. and Bois, D., Laser and Electron Beam Processing of Materials, MRS Proceedings, Academic Press, p. 385(1981)Google Scholar
5.Troxell, J. R., Ph.D. Thesis, Lehigh University (1979)Google Scholar
6.Schott, J. T., Deangelis, H. M. and Drevinsky, P. J., J. Electr. Mat. 9, 2, 419 (1980)Google Scholar
7.Kimerling, L. C., Benton, J. L., Laser and Electron Beam Processing of Materials, MRS Proceedings, Academic Press, p. 385 (1980)Google Scholar
8.Tholommier, M., Barbier, D., Pitaval, M., Ambri, M. and Laugier, A., J. Appl. Phys. (to be published) (1982)Google Scholar