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PtIn2 ohmic contacts to n-GaN

Published online by Cambridge University Press:  10 February 2011

D. B. Ingerly ,
Y. A. Chang ,
N. R. Perkins  and
T. F. Kuech
D. B. Ingerly
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706–1595
Y. A. Chang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706–1595
N. R. Perkins
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, Wisconsin 53706–1691
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, Wisconsin 53706–1691
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Abstract

A new metallization scheme has been developed to form ohmic contacts to n-GaN. Contacts were fabricated by sputtering the intermetallic compound, PtIn2 on n-GaN (n ∼ 5 ×l017 cm−3) grown by metalorganic vapor phase epitaxy (MOVPE) with some of the contacts subjected to rapid thermal annealing. Contacts in the as-deposited state exhibited nearly ohmic behavior with a specific contact resistance of 1.2 × 10−2 Ω cm2. Contacts subjected to rapid thermal annealing at 800 °C for 1 minute exhibited linear current-voltage characteristics and a decrease in contact resistance. To rationalize the reaction at the contact interface the phase diagram of the PtIn2-PtGa2-InN-GaN reciprocal system at 800 °C was calculated based on known and estimated thermodynamic values. This phase diagram suggests that there will be a solid state exchange of In and Ga atoms at the Ptln2/GaN contact interface producing (InxGa1-x)N and Pt(In,Ga)2. Results from Auger depth profiling used to examine the Ptln2/n-GaN contacts are consistent with this estimated phase diagram information. It is proposed that the formation of (InxGa1-x)N at the contact interface is responsible for the ohmic behavior of Ptln2 contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1103
Copyright
Copyright © Materials Research Society 1997

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References

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