Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-29T07:35:13.577Z Has data issue: false hasContentIssue false
  • English
  • Français

Pt Film Growth with Tetra-Kis(Triflurophosphine)Platinum

Published online by Cambridge University Press:  10 February 2011

Y.-M. Sun ,
J. Lozano ,
N. Mettlach ,
J. G. Ekerdt ,
S. Madhukar ,
R. L. Hance  and
J. M. White
Y.-M. Sun
Affiliation:
Texas Materials Institute The University of Texas at Austin Austin, TX 78712
J. Lozano
Affiliation:
Texas Materials Institute The University of Texas at Austin Austin, TX 78712
N. Mettlach
Affiliation:
Texas Materials Institute The University of Texas at Austin Austin, TX 78712
J. G. Ekerdt
Affiliation:
Texas Materials Institute The University of Texas at Austin Austin, TX 78712
S. Madhukar
Affiliation:
Embedded Systems Technology Laboratories Motorola, Austin, TX 78721
R. L. Hance
Affiliation:
Embedded Systems Technology Laboratories Motorola, Austin, TX 78721
J. M. White
Affiliation:
Texas Materials Institute The University of Texas at Austin Austin, TX 78712
Get access

Abstract

Platinum film growth using Pt(PF3)4 precursors was investigated. The study focused on three aspects of film growth: conformality, adhesion and selective growth. Pt(PF3)4 deposited pure Pt films over a wide range of temperatures (∼200 to 400 °C). At 200 °C, the step coverage for a via with an aspect ratio of three was poor. Lower growth temperatures showed a significant decrease in the growth rate. In addition, these films had poor adhesion to the substrate as indicated by separation between the Pt and the substrate in cross sectional scanning electron microscopy images. Oxygen addition during Pt film growth from Pt(PF3)4 improved both film conformality and adhesion. With oxygen, the step coverage on the side wall was greater than 90 % The dependence of the film growth rate on oxygen varied with the growth temperature: the growth rate decreased at 200 °C, while it changed slightly at 260 °C when oxygen was added. The substrate effect on the initial growth rate was studied on various substrates. The initial growth rate on metals is much faster than that on other substrates. The growth rate decreased on various substrates in the order of iridium > titanium nitride > barium strontium titanate > silicon nitride > silicon oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 103
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kotecki, D. E., Semiconductor International, Nov. 1996, p. 109.Google Scholar
2. Shimizu, M., Fujisawa, H., Hyodo, S., Nakashima, S., Niu, H., Okino, H., Shiosaki, T., Mater. Res. Soc. Symp. Proc. 493, p. 159 (1998).Google Scholar
3. Cho, H.-J., Horii, H., Hwang, C. S., Kim, J.-W., Kang, C. S., Lee, B. T., Lee, S. I., Koh, Y.B., and Lee, M. Y., Jpn. J. Appl. Phys., Part 1, 36, p. 1722 (1997).Google Scholar
4. Nakamura, T., Nakao, Y., Kamisawa, A., and Takasu, H., Jpn. J. Appl. Phys., Part 1, 1995, 34(9A), 5184–5187. (Ir, Pt electrodes with PZT)Google Scholar
5. Hwang, C. S., Lee, B. T., Cho, H.-J., Lee, K. H., Kang, C. S., Hideki, H., Lee, S. I., and Lee, M. Y., Appl. Phys. Lett., 1997, 71(3), 371–373. (Pt/BST/IrO2)Google Scholar
6. Taylor, D. J., Larsen, P. K., Dormans, G. J. M., and de Veirman, A. E. M., Integrated Ferroelecrics, 1995, 7, 123–138. (Pt electrodes with PZT)Google Scholar
7. Hsu, D. S. Y., Turner, N. H., Pierson, K. W., and Shamamian, V. A., J. Vac. Sci. Technol. B 10(5), 2251–2258, 1992.Google Scholar
8. Rand, M. J., J. Electrochem. Soc., 120(5), 686–693, 1973.Google Scholar
9. Morabito, J. M. and Rand, M. J., Thin Solid Films, 22, 293–303, 1974.Google Scholar
10. Sun, Y.-M., Endle, J. P., Smith, K., Whaley, S., Mahaffy, R., Ekerdt, J. G. and White, J. M., and Hance, R. L., Thin Solid Films, 346, p100 (1999).Google Scholar
11. Zhang, R. and Comita, P. B., Chem. Phys. Lett., 200(3), 297–302, 1992.Google Scholar
12. Xin, Q.-S. and White, J. M., in preparation.Google Scholar
13. Liang, S. D. and Trenary, M., J. Chem. Phys., 89(5), 1988, 3323–3330.Google Scholar