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Pt and Pd Silicides and Pd Germanide as Contact Metallizations for GaAs

Published online by Cambridge University Press:  22 February 2011

E. D. Marshall ,
C. S. Wu ,
D. M. Scott ,
S. S. Lau  and
T. F. Kuech
E. D. Marshall
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, University of California-San Diego, La Jolla, CA, 92093,
C. S. Wu
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, University of California-San Diego, La Jolla, CA, 92093,
D. M. Scott
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, University of California-San Diego, La Jolla, CA, 92093,
S. S. Lau
Affiliation:
Dept. of Electrical Engineering and Computer Sciences, University of California-San Diego, La Jolla, CA, 92093,
T. F. Kuech
Affiliation:
IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY, 10598.
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Abstract

Refractory metal silicides have been shown to form stable Schottky barriers on GaAs up to an annealing temperature of ∼850°C. In this study, the metallurgical and electrical stability of near noble metal (Pd and Pt) silicide contacts to GaAs have been investigated. It is observed that Pd and Pt silicides are metallurgically more stable than Pd and Pt alone on GaAs. A correlation between the stability of silicide contacts and the heat of formation of the silicides normalized to per metal atom is found, thus allowing the prediction of contact stability of other silicides on GaAs. We have also investigated the feasibility of using solid-phase epitaxy (SPE) to grow a highly doped Ge epitaxial layer on GaAs to form a non-alloyed ohmic contact. This approach of forming a Ge/GaAs heterojunction alleviates the high vacuum requirement of MBE techniques. Our preliminary results indicate that relatively low contact resistivities can be obtained by SPE using the Ge-Sb-Pd system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 63
Copyright
Copyright © Materials Research Society 1984

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References

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