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Proton formation and diffusion in amorphous SiNx:H
Published online by Cambridge University Press: 11 August 2011
Abstract
In this work the release of atomic hydrogen from SiNx:H films is investigated. Thermal treatment as well as UV-illumination induces the formation of H2, increasing the tensile stress in the film. N-rich SiNx:H films release hydrogen only by UV-illumination, indicating involvement of charge trapping. Ab initio calculations show a possible reaction path for the release and diffusion of protons that also explain the diffusion of hydrogen into Si substrates.
Keywords
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1330: Symposium J – Protons in Solids , 2011 , mrss11-1330-j02-02
- Copyright
- Copyright © Materials Research Society 2011