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Proton formation and diffusion in amorphous SiNx:H

Published online by Cambridge University Press:  11 August 2011

H.F.W. Dekkers ,
V. Prajapati ,
S. Van Elshocht  and
E. Vancoille
H.F.W. Dekkers
Affiliation:
FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium
V. Prajapati
Affiliation:
SSET, imec, Kapeldreef 75, 3001 Leuven, Belgium.
S. Van Elshocht
Affiliation:
FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium
E. Vancoille
Affiliation:
FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium
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Abstract

In this work the release of atomic hydrogen from SiNx:H films is investigated. Thermal treatment as well as UV-illumination induces the formation of H2, increasing the tensile stress in the film. N-rich SiNx:H films release hydrogen only by UV-illumination, indicating involvement of charge trapping. Ab initio calculations show a possible reaction path for the release and diffusion of protons that also explain the diffusion of hydrogen into Si substrates.

Keywords

nitridehydrogenationH
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1330: Symposium J – Protons in Solids , 2011 , mrss11-1330-j02-02
Copyright
Copyright © Materials Research Society 2011

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References

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